Dissociative adsorption of Si2H6 on silicon at hyperthermal energies: The influence of surface structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110674
Reference13 articles.
1. Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry
2. Selective growth condition in disilane gas source silicon molecular beam epitaxy
3. The role of surface reactions in monosilane pyrolysis
4. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
5. Molecular beam studies of gas-surface collision dynamics
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces;Surface Science Reports;2017-05
2. Molecular mechanisms for disilane chemisorption on Si(100)-(2×1);The Journal of Chemical Physics;2009-03-21
3. Chapter 16 Growth and Etching of Semiconductors;Dynamics;2008
4. Hyperthermal chemistry in the gas phase and on surfaces: theoretical studies;International Reviews in Physical Chemistry;2004-07
5. InAs and GaAs quantum dots grown by hyperthermal source beams;Journal of Crystal Growth;2004-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3