Optical characteristics of p‐type GaN films grown by plasma‐assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Optical characteristics of p‐type GaN films grown by plasma‐assisted molecular beam epitaxy

Published:1996-10-28 Issue:18 Volume:69 Page:2722-2724
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Myoung J. M.,Shim K. H.,Kim C.,Gluschenkov O.,Kim K.,Kim S.,Turnbull D. A.,Bishop S. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117690

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