Temperature dependence of cathodoluminescence from thin GaAs‐AlGaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111621
Reference4 articles.
1. Injection, intersubband relaxation and recombination in GaAs multiple quantum wells
2. Temperature dependence of photoluminescence from GaAs single and multiple quantum‐well heterostructures grown by molecular‐beam epitaxy
3. A luminescence study of the interface quality of GaInAs/InP single quantum wells grown by metalorganic vapour phase epitaxy
4. Extended, monolayer flat islands and exciton dynamics inGa0.47In0.53As/InP quantum-well structures
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1. Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence;physica status solidi (a);2023-04-05
2. Overview of Cathodoluminescence (CL) Spectroscopy;Advanced Optical Spectroscopy Techniques for Semiconductors;2023
3. Investigation of temperature-dependent photoluminescence in multi-quantum wells;Scientific Reports;2015-07-31
4. Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy;Optical Materials;2001-06
5. Influence of excitation energy on carrier dynamics in GaAs-Al0.46Ga0.54As superlattice;Semiconductor Science and Technology;2000-08-15
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