A luminescence study of the interface quality of GaInAs/InP single quantum wells grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

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A luminescence study of the interface quality of GaInAs/InP single quantum wells grown by metalorganic vapour phase epitaxy

Published:1991-01 Issue:1 Volume:9 Page:99-102
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Nilsson S.,Gustafsson A.,Liu X.,Samuelson L.,Pistol M.-E.,Seifert W.,Fornell J.-O.,Ledebo L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Semiconductor Quantum-Well Structures for Optoelectronics–Recent Advances and Future Prospects–

2. Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

3. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

4. Proceedings of the 20th International Conference on the Physics of Semiconductors;Samuelson,1990

5. Interface structure and optical properties of quantum wells and quantum boxes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth correlated lateral variations of layer thicknesses in GaAs‐AlGaAs multiple quantum wells investigated by cathodoluminescence;Applied Physics Letters;1995-05

2. Cathodoluminescence studies of exciton localization in GaAs‐AlGaAs single quantum wells;Journal of Applied Physics;1995-01

3. Temperature dependence of cathodoluminescence from thin GaAs‐AlGaAs multiple quantum wells;Applied Physics Letters;1994-05-02

4. Exciton dynamics for extended monolayer islands in thinIn0.53Ga0.47As/InP quantum wells;Physical Review B;1992-04-15

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