Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125963
Reference9 articles.
1. Hot electrons in low-dimensional structures
2. Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons
3. Shubnikov–de Haas oscillations under hot-electron conditions in Si/Si1−xGexheterostructures
4. Power loss by two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening
5. Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases
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