Effects of Spatial Dependence of Recombination Centers on the I‐V Characteristics of p‐n Junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657150
Reference17 articles.
1. Role of Gradual Capture in the Photoelectromagnetic and Photoconductive Effects
2. On the p-n junctions at variable signals†
3. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spatial distribution of radiative recombination rate, time delays, and Q switching in single heterostructure lasers;IEEE Journal of Quantum Electronics;1978-11
2. Effects of dislocations in silicon transistors with implanted bases;Solid-State Electronics;1977-09
3. Oxidation‐induced stacking faults in silicon. II. Electrical effects in P N diodes;Journal of Applied Physics;1974-01
4. On. the electroluminescence in junction diodes steady-state response †;International Journal of Electronics;1973-09
5. Effect of impurity gradient on the time delays and Q-switching in junction lasers;Physica Status Solidi (a);1972-07-16
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