Schottky barrier height of epitaxial lattice-matched TiN/Al0.72Sc0.28N metal/semiconductor superlattice interfaces for thermionic energy conversion-Reference-Cited by-同舟云学术

Schottky barrier height of epitaxial lattice-matched TiN/Al0.72Sc0.28N metal/semiconductor superlattice interfaces for thermionic energy conversion

Author:

Nayak Sanjay¹²^ORCID,Acharya Shashidhara²,Baral Madhusmita³⁴,Garbrecht Magnus⁵^ORCID,Ganguli Tapas³⁴,Shivaprasad S. M.¹²⁶^ORCID,Saha Bivas¹²⁶^ORCID

Affiliation:

1. Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

2. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

3. Raja Ramanna Centre for Advanced Technology, Indore 452013, India

4. Homi Bhabha National Institute, Training school complex, Anushakti Nagar, Mumbai 400094, India

5. Australian Centre for Microscopy and Microanalysis, The University of Sydney, Camperdown, NSW 2006, Australia

6. School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

Funder

International Center for Materials Science, JNCASR India.

Science and Engineering Research Board

Sheikh Saqr Laboratory

Australian Centre for Microscopy and Microanalysis, University of Sydney

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference50 articles.

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