An InN/InGaN/GaN nanowire array guided wave photodiode on silicon-Reference-Cited by-同舟云学术

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An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

Published:2016-11-07 Issue:19 Volume:109 Page:191102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hazari Arnab¹²^ORCID,Zunaid Baten Md.¹²,Yan Lifan¹³,Millunchick Joanna M.¹³,Bhattacharya Pallab¹²

Affiliation:

1. Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/109/19/1.4967439.pdf?itemId=/content/aip/journal/apl/109/19/10.1063/1.4967439&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference26 articles.

1. Silicon-based silicon–germanium–tin heterostructure photonics

2. An 852×600 pixel OLED-on-silicon color microdisplay using CMOS subthreshold-voltage-scaling current drivers

3. Review of recent progress of III-nitride nanowire lasers

4. Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon

5. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

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1. Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors;Surfaces and Interfaces;2022-04

2. Emergence and tunability of transmission gap in the strongly disordered regime of a dielectric random scattering medium;Optics Express;2021-05-19

3. InGaN/GaN Quantum Dot Light-Emitting Diodes on Silicon with Coalesced GaN Nanowire Buffer Layer;ACS Applied Nano Materials;2021-02-16

4. Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering;Materials Science in Semiconductor Processing;2019-11

5. Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment;Gallium Nitride Materials and Devices XIV;2019-03-01

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