InGaN/GaN Quantum Dot Light-Emitting Diodes on Silicon with Coalesced GaN Nanowire Buffer Layer
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, United States
Funder
Horace H. Rackham School of Graduate Studies, University of Michigan
College of Engineering, University of Michigan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c03227
Reference47 articles.
1. Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon
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3. High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector
4. Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon
5. Reaction-diffusion model for thermal growth of silicon nitride films on Si
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