Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234807
Reference33 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. Pendeoepitaxy of gallium nitride thin films
3. Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
4. Gallium nitride and related materials: challenges in materials processing
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