Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices-Reference-Cited by-同舟云学术

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

Published:2014-08-14 Issue:6 Volume:116 Page:064503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aslam N.¹,Longo V.²,Rodenbücher C.¹,Roozeboom F.²,Kessels W. M. M.²,Szot K.¹,Waser R.¹,Hoffmann-Eifert S.¹

Affiliation:

1. Peter-Grünberg Institute (PGI-7), Forschungszentrum Jülich and JARA-FIT, 52425 Jülich, Germany

2. Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4891831

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