Bonding principles of passivation mechanism at III-V-oxide interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665061
Reference23 articles.
1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
2. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
3. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
4. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future
5. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
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