1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2. C. Huyghebaert, T. Schram, Q. Smets, T. Kumar Agarwal, D. Verreck, S. Brems, A. Phommahaxay, D. Chiappe, S. El Kazzi, C. Lockhart de la Rosa, G. Arutchelvan, D. Cott, J. Ludwig, A. Gaur, S. Sutar, A. Leonhardt, D. Marinov, D. Lin, M. Caymax, I. Asselberghs, G. Pourtois, and I. P. Radu, presented at the IEEE International Electron Devices Meeting (IEDM), 2018 (unpublished).
3. Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping
4. First-principal insight of the gold-metal interaction to bilayer MoSe2 of AB and AA stacking order
5. Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides