Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping-Reference-Cited by-同舟云学术

Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping

Author:

Somvanshi Divya¹,Ber Emanuel¹,Bailey Connor S.²,Pop Eric²³⁴^ORCID,Yalon Eilam¹^ORCID

Affiliation:

1. Viterbi Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel

2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

3. Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States

4. Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States

Funder

Technion-Israel Institute of Technology

U.S. Department of Defense

Stanford University

Department of Science and Technology, Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference59 articles.

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