Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs-Reference-Cited by-同舟云学术

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Published:2017-12 Issue:12 Volume:7 Page:125023
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Song Liang¹²,Fu Kai²,Zhang Zhili²,Sun Shichuang²³,Li Weiyi²,Yu Guohao²,Hao Ronghui²⁴^ORCID,Fan Yaming²,Shi Wenhua²,Cai Yong²,Zhang Baoshun²⁵

Affiliation:

1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People’s Republic of China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People’s Republic of China

3. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

4. School of Materials Science and Engineering, Nanjing University of Science and Technology, Xiao Ling Wei 200, Nanjing 210094, People’s Republic of China

5. Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, People’s Republic of China

Funder

Key Research and Development Program of Jiangsu Province

National Key Research and Development Program of China

National Key Scientific Instrument and Equipment Development Projects of China

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000126

Reference28 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

3. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

4. High performance AlGaN/GaN HEMTs with AlN/SiNxpassivation

5. Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

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4. The Modulation Effect of LPCVD-Si_xN_y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure;IEEE Transactions on Electron Devices;2022-09

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