Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4838041
Reference23 articles.
1. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators
2. Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer
3. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
4. Electrical and structural properties of dislocations confined in a InGaAs/GaAs heterostructure
5. 2.6 μm InGaAs photodiodes
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