Origin of dislocation-related photoluminescence bands in very thin silicon–germanium layers grown on silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120516
Reference13 articles.
1. Dislocation-related photoluminescence in silicon
2. Cathodoluminescence study on dislocations in silicon
3. Time‐resolved D‐band luminescence in strain‐relieved SiGe/Si
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