Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125288
Reference12 articles.
1. Carrier recombination rates in narrow-gapInAs/Ga1−xInxSb-based superlattices
2. Above-room-temperature optically pumped midinfrared W lasers
3. Suppression of Auger recombination in arsenic‐rich InAs1−xSbxstrained layer superlattices
4. Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes
5. Charge-carrier exclusion in InAs
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