Chemical reaction at the ZnSe/GaAs interface detected by Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104149
Reference9 articles.
1. Formation of interfacial layers in InSb‐CdTe heterostructures studied by Raman scattering
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3. Valence-band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiation
4. ZnSe– and Se–GaAs interfaces
5. Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
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