Impact of the resistive switching effects in ZnMgO electron transport layer on the aging characteristics of quantum dot light-emitting diodes

Author:

Ding Shihao12,Wu Zhenghui1,Qu Xiangwei1,Tang Haodong1,Wang Kai1,Xu Bing12,Sun Xiao Wei12ORCID

Affiliation:

1. Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

2. Shenzhen Planck Innovation Technologies Co. Ltd., No.18 Huancheng South Road, Longgang District, Shenzhen 518129, China

Funder

Guangdong Province's Key R&D Program

Environmentally Friendly Quantum Dots Luminescent Materials

Guangdong Basic and Applied Basic Research Foundation

Guangdong University Key Laboratory for Advanced Quantum dot Displays and Lighting

Guangdong Youth Innovative Talents Project

Shenzhen Key laboratory of Advanced Quantum Dot Displays and Lighting

Shenzhen Peacock Team Project

Shenzhen Innovation Project

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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