The warming-up effects of quantum-dot light emitting diodes: A reversible stability issue related to shell traps

Author:

Li Menglin1ORCID,Zhang Xin1,Bao Hui1,Yan Yiran2,Wu Xian-gang1,Wang Cheng2,Cao Yongqi1,Yang Min1,Chen Cuili1,Hu Xiangmin1ORCID,Hou Wenjun2,Cao Weiran2,Zhong Haizheng1ORCID

Affiliation:

1. MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology 1 , Beijing 100081, China

2. TCL Corporate Research 2 , Shenzhen, Guangdong 518067, China

Abstract

The aging phenomenon is commonly observed in quantum-dot light emitting diodes (QLEDs), involving complex chemical or physical processes. Resolving the underlying mechanism of these aging issues is crucial to deliver reliable electroluminescent devices in future display applications. Here, we report a reversible positive aging phenomenon that the device brightness and efficiency significantly improve after device operation, but recover to initial states after long-time storage or mild heat treatment, which can be termed as warming-up effects. Steady and transient equivalent circuit analysis suggest that the radiative recombination current dramatically increases but electron leakage from the quantum dots (QDs) to hole transport layer becomes more accessible during the warming-up process. Further analysis discloses that the notable enhancement of device efficiency can be ascribed to the filling of shell traps in gradient alloyed QDs. This work reveals a distinct positive aging phenomenon featured with reversibility, and further guidelines would be provided to achieve stable QLED devices in real display applications.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

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