Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots-Reference-Cited by-同舟云学术

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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots

Published:2012-09-24 Issue:13 Volume:101 Page:131101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ma Jun,Ji Xiaoli,Wang Guohong,Wei Xuecheng,Lu Hongxi,Yi Xiaoyan,Duan Ruifei,Wang Junxi,Zeng Yiping,Li Jinmin,Yang Fuhua,Wang Chao,Zou Gang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4754533

Reference23 articles.

1. Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

2. Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

3. Theory of reduced built-in polarization field in nitride-based quantum dots

4. Epitaxially Self-Assembled Quantum Dots

5. A InGaN/GaN quantum dot green (λ=524 nm) laser

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