Neutron radiation-resistant aluminum nitride memristor-Reference-Cited by-同舟云学术

Neutron radiation-resistant aluminum nitride memristor

Published:2022-10-17 Issue:16 Volume:121 Page:163502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yanming¹,Tang Ge²^ORCID,Feng Peng¹,Kang Kaijin¹^ORCID,Tang Xiaosheng¹,Li Mo³,Hu Wei¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

2. College of Nuclear Technology and Automation Engineering, Chengdu University of Technology, Chengdu 610059, China

3. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Abstract

A memristor is promising as an electronic synapse or next-generation nonvolatile memory, and its radiation resistance has recently received extensive attention for broader application fields. We fabricated Al/AlN/TiN crossbar arrays and investigated their resistive switching properties and neutron radiation-resistant performance. Al/AlN/TiN memory devices have many excellent features, such as operating currents down to 10 μA, memory endurance over 120 cycles, resistance window greater than 104, and retention time in excess of 104 s. More importantly, the memory devices with different resistance states still maintain remarkable resistive switching behaviors after irradiating with a dose of neutron radiation up to 1 × 1014 n/cm2, demonstrating outstanding potential application in radiation-resistant electronics.

Funder

Fundamental Research Funds for the Nationnal Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Sichuan Province

Natural Science Foundation of Chongqing

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0107956

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