Theory of the shear acoustic phonons spectrum and their interaction with electrons due to the piezoelectric potential in AlN/GaN nanostructures of plane symmetry
Author:
Affiliation:
1. Mathematical Modeling of Mass Transfer Laboratory, Ternopil Ivan Puluj National Technical University, Ternopil 46001, Ukraine
2. Sorbonne Universités, ESPCI-LPEM, 10 rue Vauquelin, Paris F-75231, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/10.0003176
Reference23 articles.
1. Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature
2. Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications
3. Theoretical model for polarization superlattices: Energy levels and intersubband transitions
4. Spontaneous polarization and piezoelectric constants of III-V nitrides
5. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
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1. Exciton-phonon interaction in planar nitride nanostructures: The case of acoustic phonons;Physical Review B;2023-08-07
2. Nitride Semiconductor Quantum Dots - Mathematical Models of the Electronic Spectrum and Methods for its Simulation;2022 12th International Conference on Advanced Computer Information Technologies (ACIT);2022-09-26
3. Investigation of the electron-acoustic phonon interaction via the deformation and piezoelectric potentials in AlN/GaN resonant tunneling nanostructures;Superlattices and Microstructures;2021-08
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