Effect of interface layer on the microstructure and electromigration resistance of Al‐Si‐Cu alloy on TiN/Ti substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109366
Reference9 articles.
1. Electromigration Damage in Aluminum Film Conductors
2. Texture and Microstructure Effects on Electromigration Behavior of Aluminum Metallization
3. Grain Growth in Thin Films
4. Effect of Redundant Microstructure on Electromigration‐Induced Failure
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects;Applied Physics Letters;2000-01-10
2. Review of plasma thin-film technology in automobile industry;Surface and Coatings Technology;1999-02
3. Orientational growth of Al(111) caused by interposing Al3Ti layer on a highly oriented TiN(200) film;Electronics and Communications in Japan (Part II: Electronics);1998-09
4. Effect of water absorption of dielectric underlayers on crystal orientation in Al–Si–Cu/Ti/TiN/Ti metallization;Journal of Applied Physics;1997-05-15
5. The Effect of Ti Interla Yer on the Hillock Formation of Al-0.5WT%Cu Films on the Tin/Ti/SiO2/Si Multilayer Structure;MRS Proceedings;1997
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