Ab initio calculations of structural and energetic properties of defects in gallium nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2947604
Reference21 articles.
1. III–nitrides: Growth, characterization, and properties
2. Pressure dependence of energy band gaps for AlxGa1 -xN, InxGa1 -xN and InxAl1 -xN
3. Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
4. First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
5. Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors;ECS Journal of Solid State Science and Technology;2021-05-01
2. First-principles theoretical analysis and electron energy loss spectroscopy of vacancy defects in bulk and nonpolar ( 10 1 ¯ 0) surface of GaN;Journal of Vacuum Science & Technology A;2020-12
3. Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures;Nuclear Engineering and Technology;2020-07
4. Electronic structure and optical properties of native point defects on Si-doped GaN (0001) surface;International Workshop on Thin Films for Electronics, Electro-Optics, Energy, and Sensors 2019;2019-12-06
5. Donor and acceptor characteristics of native point defects in GaN;Journal of Physics D: Applied Physics;2019-06-18
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3