High-performance infrared Ge-based plasmonic photodetector enhanced by dual absorption mechanism
Author:
Affiliation:
1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China
2. State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China
Funder
The Science and Technology on Analog Integrated Circuit Laboratory of China
The National Defense Advance Research Project
The Science Research Plan in Shaanxi Province of China
The Innovation Fund of Xidian University
Fundamental Research Funds for the Central Universities
Publisher
AIP Publishing
Subject
Computer Networks and Communications,Atomic and Molecular Physics, and Optics
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0021187
Reference39 articles.
1. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
2. Silicon photonic platforms for mid-infrared applications [Invited]
3. Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction
4. Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC*
5. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
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