New omnipresent electron paramagnetic resonance signal in as‐grown semi‐insulating liquid encapsulation Czochralski GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97378
Reference18 articles.
1. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
2. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
3. Identification of AsGaantisite defects in liquid encapsulated Czochralski GaAs
4. Photoresponse of the AsGaantisite defect in as‐grown GaAs
5. Photoresponse of the AsGaantisite defect in as‐grown GaAs
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1. Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-08
2. Electron paramagnetic resonance experiments applied to SI-GaAs;Progress in Crystal Growth and Characterization of Materials;1997-01
3. Influence Of The Temperature And The Light Intensity On The Metastable Transformation Of EL2;MRS Proceedings;1996
4. Temperature dependence of theEL2 metastability in semi-insulating GaAs: Thermal hysteresis between the metastable and reverse transitions;Physical Review B;1994-11-15
5. Photocurrent transients in semi‐insulating GaAs, effects of EL2 and other defects;Journal of Applied Physics;1994-03-15
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