Author:
Alvarez A.,Jimenez J.,Gonzalez M. A.,Chafai M.
Abstract
AbstractThe temperature dependence of the metastable transformation of EL2 is explained in terms of the thermal emission of holes from the actuator level, VA. A model including the thermal release of holes from this level is presented. The numerical solution allows to account for the low photoquenching efficiency above 80 K in an accurate way. The existence of this level was postulated on the bases of the electric compensation and the temperature dependence of the metastable transformation of EL2 in semiinsulating GaAs. This level allows a complete description of the driving mechanism of the metastable transformation of EL2.
Publisher
Springer Science and Business Media LLC