Effect of barrier thickness on electromigration reliability of Cu/porous low k interconnects

Author:

Pyun Jung Woo,Lu Xia,Chung Jayhoon,Yoon Sean,Ho Paul S.,Henis Neil,Neuman Kyle,Smith Larry,Pfeifer Klaus

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference11 articles.

1. Electromigration path in Cu thin-film lines

2. C.K. Hu, D. Canaperi, S. T. Chen, L. M. Gignac, B. Herbst, S. Kaldor, M. Krishnan, E. Liniger, D. L. Rath, D. Restaino, R. Rosenberg, J. Rubino, S.C. Seo, A. Simon, S. Smith, and W.T. Tseng, 2004 IEEE International Reliability Physics Symposium Proceedings 42nd Annual, Phoenix, Arizona, (IEEE, New York, 2004), pp. 222–228.

3. H. Kondo, Y. Nakao, T. Suzuki, H. Sakai, and M. Shimizu, 2002 IEEE International Interconnect Technology Conference (IEEE, New York, 2002), pp. 292–294.

4. Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

5. M. A. Meyer, M. Grafe, H. J. Engelmann, and E. Zschech, Materials for Advanced Metallization Conference, Brussels, 2004 (unpublished).

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