Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state-Reference-Cited by-同舟云学术

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

Published:2017-08-14 Issue:7 Volume:111 Page:072405
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Y.¹,Yan X. H.¹²,Guo Y. D.²,Xiao Y.¹

Affiliation:

1. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

2. Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210046, China

Funder

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Jiangsu Province (Jiangsu Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4999764

Reference44 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

3. Origin, Development, and Future of Spintronics (Nobel Lecture)

4. First-Principles Theory of Quantum Well Resonance in Double Barrier Magnetic Tunnel Junctions

5. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

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