Molecular‐beam epitaxial growth and transport properties of InAs epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344141
Reference45 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Molecular Beam Epitaxial Growth of InAs
3. On the practical applications of MBE surface phase diagrams
4. Dislocation density reduction through annihilation in lattice‐mismatched semiconductors grown by molecular‐beam epitaxy
5. Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition
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