Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties-Reference-Cited by-同舟云学术

Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

Published:2002-02-18 Issue:7 Volume:80 Page:1249-1251
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cho Yong Jai,Nguyen N. V.,Richter C. A.,Ehrstein J. R.,Lee Byoung Hun,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1448384

Reference7 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

4. Parameterization of the optical functions of amorphous materials in the interband region

5. Parameterization of the optical functions of amorphous materials in the interband region

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