Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126510
Reference18 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
4. Metal semiconductor field effect transistor based on single crystal GaN
5. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
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