Photoluminescence study of low temperature epitaxial growth Yb-doped AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621080
Reference13 articles.
1. Luminescence of the rare‐earth ion ytterbium in InP, GaP, and GaAs
2. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
3. Thermal quenching mechanism of Yb intra‐4f‐shell luminescence in InP
4. Optical and electrical properties of ytterbium‐doped GaAs grown by metalorganic chemical vapor deposition
5. Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy
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