Tailoring the properties of semiconductor nanowires using ion beams-Reference-Cited by-同舟云学术

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Tailoring the properties of semiconductor nanowires using ion beams

Published:2010-08-20 Issue:10 Volume:247 Page:2329-2337
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Ronning C.,Borschel C.,Geburt S.,Niepelt R.,Müller S.,Stichtenoth D.,Richters J. -P.,Dev A.,Voss T.,Chen L.,Heimbrodt W.,Gutsche C.,Prost W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference76 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Catalyst−Nanostructure Interaction in the Growth of 1-D ZnO Nanostructures

3. Failure of the Vapor−Liquid−Solid Mechanism in Au-Assisted MOVPE Growth of InAs Nanowires

4. Mass Transport Model for Semiconductor Nanowire Growth

5. Remote p-Doping of InAs Nanowires

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3. Transition Metal and Rare Earth Element Doped Zinc Oxide Nanowires for Optoelectronics;physica status solidi (b);2019-01-23

4. Electronic structure of gadolinium complexes in ZnO in the GW approximation;Journal of Magnetism and Magnetic Materials;2018-04

5. Ion-Beam Sculpting of Nanowires;physica status solidi (RRL) - Rapid Research Letters;2017-11-14

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