Leakage current in InGaAsP avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91418
Reference11 articles.
1. Fiber-optical transmission between 0.8 and 1.4 µm
2. InxGa1−xAsyP1−y/InP heterojunction photodiodes
3. Ion‐implanted InGaAsP avalanche photodiode
4. GaInAsP/InP avalanche photodiodes
5. Be‐implanted 1.3‐μm InGaAsP avalanche photodetectors
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1. Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes;Journal of the Korean Physical Society;2007-07-14
2. Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 mu m wavelength optical communication use;Journal of Lightwave Technology;1988
3. Lattice distortion associated with isolated defects in semiconductors;Philosophical Magazine B;1987-11
4. Sperrschichtphotodetektoren;Optoelektronik II;1986
5. Chapter 2 Compound Semiconductor Photodiodes;Semiconductors and Semimetals;1985
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