The demonstration of the Si nano-tube device with the promising short channel control
Author:
Affiliation:
1. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan, R. O. C.
Funder
National Science Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932207
Reference8 articles.
1. Reduced carrier backscattering in heterojunction SiGe nanowire channels
2. Simulation of junctionless Si nanowire transistors with 3 nm gate length
3. Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- $\kappa$/Metal-Gate Device Structures
4. Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness
5. Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of strain in silicon nanotube FET devices for low power applications;The European Physical Journal Applied Physics;2019-01
2. The investigation of the diameter dimension effect on the Si nano-tube transistors;AIP Advances;2016-03
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