Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764070
Reference16 articles.
1. Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology
2. Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz
3. N-polar GaN∕AlGaN∕GaN high electron mobility transistors
4. Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$
5. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
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1. N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization;Crystals;2023-04-19
2. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15
3. Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors;Semiconductor Science and Technology;2019-06-21
4. N-polar III-nitride transistors;III-Nitride Electronic Devices;2019
5. Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography;Applied Physics Letters;2017-04-03
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