Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography-Reference-Cited by-同舟云学术

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Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Published:2017-04-03 Issue:14 Volume:110 Page:143101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bonef Bastien¹^ORCID,Catalano Massimo²³,Lund Cory¹,Denbaars Steven P.¹^ORCID,Nakamura Shuji¹,Mishra Umesh K.⁴,Kim Moon J.²,Keller Stacia⁴

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Materials Science and Engineering, University of Texas, Dallas, Texas 75062, USA

3. Institute for Microelectronics and Microsystems, CNR-IMM, Via Monteroni, 73100 Lecce, Italy

4. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979786

Reference52 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. N-polar GaN epitaxy and high electron mobility transistors

3. Effects of polarization charge on the photovoltaic properties of InGaN solar cells

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