The role of solitons and the kinetics of precipitate growth in boron doped silicon–germanium alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332354
Reference10 articles.
1. Precipitation of phosphorus from solid solution in Ge-Si alloy
2. Diffusion‐Limited Growth of Precipitate Particles
3. Precipitation of phosphorus from solid solutions in Si-Ge alloys and its effect on thermoelectric transport properties
4. Altering the thermal conductivity of phosphorus-doped Si-Ge alloys by the precipitation of dopant
5. Application of the Lifshitz‐Slyozov theory to precipitation of phosphorus in silicon‐germanium thermoelectric alloys
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1. Fabrication and Thermoelectrical Power Factor of n-type Si85Ge15 Alloys;Journal of Physics: Conference Series;2019-06-01
2. Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy;Journal of Applied Physics;2013-04-14
3. Boron in Polycrystalline Si x Ge1 − x Films: Phase Diagram and Solid Solubility;Journal of The Electrochemical Society;1998-07-01
4. Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy;Journal of Applied Physics;1992-01
5. Recent advances in silicon-germanium alloy technology and an assessment of the problems of building the modules for a radioisotope thermo-electric generator;Journal of Power Sources;1987-04
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