Fabrication and Thermoelectrical Power Factor of n-type Si85Ge15 Alloys

Abstract

Abstract N-type Si85Ge15 alloys heavily doped with different dopant over a wide range of dopant have been fabricated by hot isostatic pressing. Influences of the carrier concentration and mobility of heavily doped n-type Si85Ge15 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 31-38μWcm −1K −2 could be consistently achieved with carrier concentrations of 2.0-3.0 × 10 cm-3 and carrier mobilities of 35-42 cm 2 V -1 s -1, However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are presented.