Nanosecond switching in GeSe phase change memory films by atomic force microscopy
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863495
Reference27 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Breaking the Speed Limits of Phase-Change Memory
3. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
4. Threshold field of phase change memory materials measured using phase change bridge devices
5. Minimal Phase-Change Marks Produced in Amorphous Ge2Sb2Te5Films
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