AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from then=2 quantum well transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110128
Reference11 articles.
1. Short-wavelength InGaAlP visible laser diodes
2. Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
3. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers
4. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors
5. Design of Fabry-Perot surface-emitting lasers with a periodic gain structure
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A dual-wavelength vertical-cavity surface-emitting laser involving both the first and the second quantum states;Pure and Applied Optics: Journal of the European Optical Society Part A;1996-01
2. Time-resolved observation and measurement of multiple-wavelength laser emission in multiple-quantum-well vertical-cavity structures;Journal of the Optical Society of America B;1994-08-01
3. Wavelength dependence of the threshold in an InGaP‐InAlGaP vertical cavity surface emitting laser;Applied Physics Letters;1994-07-11
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