Local charge trapping and detection of trapped charge by scanning capacitance microscope in the SiO2/Si system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124811
Reference16 articles.
1. The effect of gate metal and SiO2thickness on the generation of donor states at the Si‐SiO2interface
2. Positive charge generation in metal‐oxide‐semiconductor capacitors
3. Hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors: Oxide charge versus interface traps
4. Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy
5. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
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