Positron annihilation studies on Al+ implanted SI-6H-SiC
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Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0017056
Reference9 articles.
1. S.E. Saddow, A. Agarwal, Advances in Silicon Carbide Processing and Applications, Artech House, Inc., Norwood, MA, 2004.
2. Ion-implantation in bulk semi-insulating 4H–SiC
3. Effect of nitrogen ion implantation in semi insulating 6H-SiC and recrystallization probed by Raman scattering
4. Calculation of positron annihilation characteristics of six main defects in6H-SiC and the possibility to distinguish them experimentally
5. Positron annihilation at proton-induced defects in6H−SiC/SiCand6H−SiC/SiO2/Sistructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Raman studies in Al+ implanted semi insulating 6H-SiC;Materials Letters;2023-08
2. Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10
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