High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2908193
Reference28 articles.
1. On transition temperatures in the plasticity and fracture of semiconductors
2. Yield and fracture properties of the wide band-gap semiconductor 4H-SiC
3. Optically pumped lasing of ZnO at room temperature
4. Mechanical deformation of single-crystal ZnO
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