The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems-Reference-Cited by-同舟云学术

The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems

Published:2008-04-14 Issue:14 Volume:128 Page:144103
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Tzeli Demeter,Tsekouras Athanassios A.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2883997

Reference24 articles.

1. Theoretical spectroscopic constants of the GaN molecule

2. Reactions of Laser-Ablated Ga, In, and Tl Atoms with Nitrogen Atoms and Molecules. Infrared Spectra and Density Functional Calculations of GaN, NGaN, NInN, and the M3N and MN3 Molecules

3. The low-lying electronic states of the GaN molecule

4. Spectroscopic constants and potential energy curves of gallium nitride (GaN) and ions: GaN+ and GaN−

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