Enhancement of zone‐folding effects in the second order response of the [(Si)5/(Ge)5]/(Si0.4Ge0.6)(001) superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109430
Reference18 articles.
1. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
2. Interband transitions in strain-symmetrizedGe4Si6superlattices
3. Interband transitions in strain-symmetrizedGe4Si6superlattices
4. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
5. Photoluminescence in short-period Si/Ge strained-layer superlattices
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1. Harmonic Generation in GaP/Si and GaP/AlP Superlattice-Based Waveguides;Journal of Lightwave Technology;2022-08-15
2. Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry;Nanoscience and Nanotechnology Letters;2017-07-01
3. Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices;The Journal of Chemical Physics;2014-06-07
4. Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled(Si5Ge5)100superlattices;Physical Review B;1997-12-15
5. Interfaces of strained layer (Ge[sub n]Si[sub m])[sub p] superlattices studied by second-harmonic generation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
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