Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness-Reference-Cited by-同舟云学术

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Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Published:2016-04-18 Issue:16 Volume:108 Page:161907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mukhtarova Anna¹²^ORCID,Valdueza-Felip Sirona¹²,Redaelli Luca¹²^ORCID,Durand Christophe¹²,Bougerol Catherine¹³,Monroy Eva¹²,Eymery Joël¹²^ORCID

Affiliation:

1. Université Grenoble Alpes, 38000 Grenoble, France

2. CEA-CNRS group “Nanophysique et semiconducteurs”, CEA-INAC-PHELIQS, 17 av. des Martyrs, 38054 Grenoble, France

3. CEA-CNRS group “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 av. des Martyrs, 38042 Grenoble, France

Funder

Ganex program

Marie Curie IEF grant

XDISPE project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4947445

Reference23 articles.

1. InGaN Solar Cells: Present State of the Art and Important Challenges

2. Optical properties associated with strain relaxations in thick InGaN epitaxial films

3. Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

4. A new approach to high‐efficiency multi‐band‐gap solar cells

5. In x Ga 1− x N/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%

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3. Design and fabrication process flow for high-efficiency and flexible InGaN solar cells;Micro and Nanostructures;2023-04

4. Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells;Materials Today Energy;2023-01

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